通過DLC成膜的等離子控制技術與無機晶體控制技術相結合，我們成功地將被認為極難合成的壓電材料單晶化, 並建立了製造方法。單晶技術能夠應用在各種半導體加工,同時表現出比現有多晶材料更高的性能。

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單晶薄膜的特色

我們的單晶技術最顯著的特點就是寬廣的製程邊隙，這是由獨特的緩衝層技術所實現的。
緩衝層可改變形狀，填補基板與壓電薄膜晶格之間的空隙，形成殘留應力最小的單晶結構。
此外，先進的等離子控制可根據應用微調材料特性，而不改變材料成分。

我們提供單晶壓電薄膜晶圓 (KRYSTAL^® Wafer)，適用於各種壓電 MEMS 應用。

使用基本薄膜結構製造的壓電材料具有以下特性：

They maintain continuous single crystal structures from the silicon (Si) substrate, and reflect single crystal structures without being influenced by the thickness of the piezoelectric thin film
They have a “ Cube on Cube” structure; that is, a crystal structure somewhat like dice stacked up so they will not roll
There are few crystal flaws in piezoelectric thin film on strontium ruthenate (SRO), enabling reliable operation even with sub-micron thickness.
These characteristics can be applied not only to PZT (lead zirconate titanate), which is well known as a piezoelectric material, but also to barium titanate (BTO) and numerous other materials as well. Silicon based substrates with a regular (100) orientation are used as a standard, but other orientations have the following characteristics:
When the silicon substrate orientation of <(110) or (111)> is changed, the film orientation can be carried over from the upper layer, providing an optimum combination of materials.

我們提供這些平台，並建議理想的組合，以滿足客戶的需求。